METHOD OF FORMING PHOTORESIST PATTERN OF SEMICONDUCTOR DEVICE USING PROTECTION LAYER FOR PREVENTING STRIATION

摘要

PURPOSE: A method of forming a photoresist pattern of a semiconductor device is provided to prevent striation from being generated on the pattern by forming an etching resistive protection layer on the pattern. CONSTITUTION: A photoresist pattern is formed on a semiconductor substrate(12). A side protection layer(16) made of a first soluble resin without reaction on photoresist is formed thereon. A second soluble resin(18) is formed on the entire surface of the resultant structure. At this time, the second soluble resin reacts on the photoresist alone. An upper protection layer is formed between the second soluble resin and the photoresist pattern by baking the resultant structure.