METHOD OF MANUFACTURING MOS CAPACITOR TYPE VOLATILE MEMORY CELL DEVICE FOR INCREASING AREA OF MOS CAPACITOR WITHOUT INCREASE OF MEMORY CELL SIZE

摘要

PURPOSE: A method of manufacturing an MOS(Metal Oxide Semiconductor) capacitor type volatile memory cell device is provided to increase surface area of an MOS capacitor without the increase of memory cell size by etching a silicon substrate and forming the capacitor in the etched portion of the substrate. CONSTITUTION: A plurality of isolation layers(112) for defining an active region is formed in a silicon substrate(109). A nitride pattern(111) for defining a capacitor forming region is formed on the substrate. A spacer(124) is formed at both sidewalls of the nitride pattern and each isolation layer. A trench(125) is formed between the nitride pattern and the isolation layer by performing dry-etching on the silicon substrate. At this time, the depth of the trench is determined according to a predetermined capacitance. A capacitor upper electrode for filling the trench is formed thereon.