ANALOG TO DIGITAL CONVERTER USING OXIDATION THICKNESS CHANGE IN RESPONSE TO DOPANT CONCENTRATION AND FABRICATING METHOD THEREOF TO MINIMIZE CONVERSION NOISE OF ANALOG TO DIGITAL CONVERTER

摘要

PURPOSE: An analog to digital converter using an oxidation thickness change in response to dopant concentration and a fabricating method thereof are provided to minimize conversion noise of the analog to digital converter by using a change of gate oxide capacitance according to the oxidation thickness change. CONSTITUTION: An isolation process is performed on a silicon substrate(100) by using an STI process. An N-well region and a P-well region are formed by performing an ion implantation process on the silicon substrate. An ion implantation process is performed to form oxide layers having different thickness on an active region. A wet-oxidation process is performed. A shallow gate oxidation process is performed. A poly layer is deposited thereon. N+ ions and P+ ions are implanted therein. A contact is formed therein and a metal process is performed sequentially.