发明名称 |
METHOD OF FORMING FINE CONTACT HOLE TO RESTRAIN SIDE-LOBE EFFECT AND IMPROVE RESOLUTION |
摘要 |
PURPOSE: A method of forming a fine contact hole is provided to restrain a side-lobe effect and improve resolution by using a wet-developable BARC(Bottom Anti-Reflection Coating) layer as a patterning layer. CONSTITUTION: A wet-developable BARC layer(102) is formed on a silicon substrate(100). The silicon substrate including the BARC layer is heated at a predetermined temperature. A photoresist is coated on the BARC layer. An exposure process for the silicon substrate is performed. A developing process for the silicon substrate is performed to form a contact hole(108) having a predetermined shape on the BARC layer. The photoresist is removed therefrom.
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申请公布号 |
KR20050011106(A) |
申请公布日期 |
2005.01.29 |
申请号 |
KR20030049948 |
申请日期 |
2003.07.21 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
JEONG, CHANG YOUNG |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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