发明名称 METHOD OF FORMING FINE CONTACT HOLE TO RESTRAIN SIDE-LOBE EFFECT AND IMPROVE RESOLUTION
摘要 PURPOSE: A method of forming a fine contact hole is provided to restrain a side-lobe effect and improve resolution by using a wet-developable BARC(Bottom Anti-Reflection Coating) layer as a patterning layer. CONSTITUTION: A wet-developable BARC layer(102) is formed on a silicon substrate(100). The silicon substrate including the BARC layer is heated at a predetermined temperature. A photoresist is coated on the BARC layer. An exposure process for the silicon substrate is performed. A developing process for the silicon substrate is performed to form a contact hole(108) having a predetermined shape on the BARC layer. The photoresist is removed therefrom.
申请公布号 KR20050011106(A) 申请公布日期 2005.01.29
申请号 KR20030049948 申请日期 2003.07.21
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 JEONG, CHANG YOUNG
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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