METHOD OF FORMING GATE SPACER OF SEMICONDUCTOR DEVICE TO SECURE LINE WIDTH OF GATE SPACER AND INCREASE UNIFORMITY TO SUBSTRATE LOSS

摘要

PURPOSE: A method of forming a gate spacer of a semiconductor device is provided to increase uniformity to substrate loss by increasing etch selectivity to a nitride layer in a process for etching a second oxide layer. CONSTITUTION: A semiconductor substrate(21) having a gate(25) is provided. A first oxide layer, a nitride layer, and a second oxide layer are sequentially deposited on the semiconductor substrate having the gate. A first spacer(29) is formed by etching the second oxide layer. The nitride layer and the first oxide layer are etched by using the first spacer as a mask. A second spacer(30) and a third spacer(31) are formed by etching the nitride layer and the first oxide layer.