发明名称 |
SHALLOW TRENCH ISOLATION LAYER WITH AIR GAP FOR INCREASING DIELECTRIC CONSTANT AND SPACER FOR PREVENTING LEAKAGE CURRENT AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: An STI(Shallow Trench Isolation) layer and a manufacturing method thereof are provided to increase dielectric constant of the isolation layer by using an air gap and to prevent leakage current due to voids of a substrate surface and over-etching into the air gap by using a spacer. CONSTITUTION: An STI layer includes a spacer, an etched groove, an air gap and a gap-fill insulating layer. The spacer(112a) made of insulating material is formed at inner sidewalls of a trench. The etched groove is formed under the trench. The air gap(118) is formed in the groove. The gap-fill insulating layer(116a) is filled in the groove and trench except the air gap.
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申请公布号 |
KR20050011498(A) |
申请公布日期 |
2005.01.29 |
申请号 |
KR20030050635 |
申请日期 |
2003.07.23 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
KIM, JAE YOUNG |
分类号 |
H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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