发明名称 SHALLOW TRENCH ISOLATION LAYER WITH AIR GAP FOR INCREASING DIELECTRIC CONSTANT AND SPACER FOR PREVENTING LEAKAGE CURRENT AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: An STI(Shallow Trench Isolation) layer and a manufacturing method thereof are provided to increase dielectric constant of the isolation layer by using an air gap and to prevent leakage current due to voids of a substrate surface and over-etching into the air gap by using a spacer. CONSTITUTION: An STI layer includes a spacer, an etched groove, an air gap and a gap-fill insulating layer. The spacer(112a) made of insulating material is formed at inner sidewalls of a trench. The etched groove is formed under the trench. The air gap(118) is formed in the groove. The gap-fill insulating layer(116a) is filled in the groove and trench except the air gap.
申请公布号 KR20050011498(A) 申请公布日期 2005.01.29
申请号 KR20030050635 申请日期 2003.07.23
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 KIM, JAE YOUNG
分类号 H01L21/76;(IPC1-7):H01L21/76 主分类号 H01L21/76
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