发明名称 |
METHOD OF CRYSTALLIZING AMORPHOUS SILICON, MASK PATTERN, AND FLAT PANEL DISPLAY DEVICE USING POLYSILICON THIN FILM FABRICATED THEREBY TO REDUCE TACT TIME |
摘要 |
PURPOSE: A method of crystallizing amorphous silicon, a mask pattern, and a flat panel display device using a polysilicon thin film fabricated thereby are provided to simplify a fabrication process and reduce a tact time by performing simultaneously a process for crystallizing amorphous silicon and a dehydrogenation process. CONSTITUTION: A method of crystallizing amorphous silicon is performed by using a mask having a first mask pattern for crystallizing amorphous silicon on one mask by irradiating same laser beams and a second mask pattern for performing a dehydrogenation process. In the process for irradiating the laser beams, the first mask pattern and the second mask pattern are applied sequentially.
|
申请公布号 |
KR20050011605(A) |
申请公布日期 |
2005.01.29 |
申请号 |
KR20030050775 |
申请日期 |
2003.07.23 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
PARK, HYE HYANG;PARK, JI YONG |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|