| 摘要 |
PURPOSE: A fabricating method of a semiconductor device with improved refresh time is provided to reduce tungsten contamination, improve a refresh characteristic in a cell region, and acquire a pocket ion implantation effect in a PMOS region of a peripheral circuit region by depositing a plasma excitation nitride layer at a lower temperature. CONSTITUTION: A gate stack of a multi-layer structure including tungsten(24) is formed on a substrate(20) including a cell region and a peripheral region. A selective oxidation process is performed. A plasma excitation nitride layer(27) is formed on the entire structure of the substrate including the gate stack under the temperature of 200 to 600 degrees centigrade. A thickness of the plasma excitation nitride layer formed on the cell region is thicker than a thickness of the plasma excitation nitride layer formed on the peripheral region. A blanket ion implantation process is performed on the cell region and the peripheral region.
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