localized growth of nanowires or nanotubes in the nanopores of a nanoporous structure for field emission applications in the fabrication of flat screens

摘要

The localized growth of nanowires or nanotubes consists of: (a) the production of elementary conducting surfaces (SEi) at the surface of an insulating layer (So) on a conductor substrate (S) or on the surface of an insulating substrate; (b) the production of at least one nanoporous structure layer (C 2) on the surface of the insulating layer or insulating substrate; (c) the growth of the nanowires or nanotubes (Nfj) inside of one part at least of the nanopores (Npi) of the porous layer, opposite at least one part of the elementary conducting surfaces.