发明名称 |
Fabrication of an epitaxial layer on a thin support layer produced in a substrate by implantation of atomic species, for optic, opto-electronic and electronic applications |
摘要 |
<p>The fabrication of an epitaxial layer (6) consists of: (a) impanting some atomic species into a support substrate (1) to define a fragile zone (12) delimiting a thin support layer (13) from the rest (11) of the substrate; (b) growing the epitaxial layer by epitaxy either directly on the thin support layer or on an intercalary layer (5, 23, 31, 32) carried on it; (c) detaching the rest of the substrate from the thin support layer, along the fragile zone, by a firm provision of external energy.</p> |
申请公布号 |
FR2857982(A1) |
申请公布日期 |
2005.01.28 |
申请号 |
FR20030009076 |
申请日期 |
2003.07.24 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
FAURE BRUCE;DI CIOCCIO LEA |
分类号 |
C30B25/18;C30B33/00;H01L21/762;(IPC1-7):C30B25/02;C30B29/38;C30B29/06 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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