| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THERMAL CVD WITHOUT ACTIVE OXIDATION SPECIES FOR OBTAINING EXCELLENT METALLIC SILICATE LAYER |
| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to improve the properties and reliability of the device in spite of the utilization of a silicon oxide layer containing metallic elements by using a thermal CVD(Chemical Vapor Deposition) without an active oxidation species. CONSTITUTION: A first organic compound containing silicon and a second organic compound containing a metallic element selected from a group consisting of Zr, Hf, Al and La are provided to a container(101) with a substrate(103). A silicon oxide layer containing the metallic element is formed on the substrate by using a thermal CVD without an active oxidation species. |
| 申请公布号 |
KR20050011003(A) |
申请公布日期 |
2005.01.28 |
| 申请号 |
KR20050003200 |
申请日期 |
2005.01.13 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
EGUCHI, KAZUHIRO;INUMIYA, SEIJI;TSUNASHIMA, YOSHITAKA |
| 分类号 |
H01L21/31;C23C16/30;C23C16/44;C23C16/455;H01L21/02;H01L21/28;H01L21/316;H01L29/423;H01L29/43;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
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