PROCEDE DE FABRICATION D'UN SUBSTRAT COMPOSITE DU TYPE SICOI COMPRENANT UNE ETAPE D'EPITAXIE

摘要

Fabrication of a composite SiCOI substrate comprises the provision of an initial substrate incorporating a support (1) of Si or SiC supporting a layer (2) of SiO2 carrying a thin film (3) of SiC and the epitaxy of SiC (4) on the thin film of SiC. The epitaxy is realised at the following temperatures: (a) from 1450 degrees C to obtain an epitaxy of polytype 6H or 4H on a carried thin film of polytype 6H or 4H respectively, if the support is of SiC; (b) from 1350 degrees C to obtain an epitaxy of polytype 3C on a carried thin layer of polytype 3C, if the support is of Si or SiC; (c) from 1350 degrees C to obtain an epitaxy of polytype 6H or 4H on a carried thin film of polytype 6H or 4H respectively, if the support is of Si. An Independent claim is also included for a semiconductor device produced on a composite SiCOI substrate obtained.