Semiconductor device for integrated circuit, has gate electrodes and gate oxide layers of LDMOS and MOS transistors formed independently in substrate, and drain and source regions of transistors formed in self aligned manner in substrate

摘要

The device has a metal oxide semiconductor (MOS) transistor and a lateral double diffusion MOS (LDMOS) transistor formed on a substrate (1). Gate electrodes (15,31) and gate oxide layers (13,29) of the LDMOS and MOS transistors, respectively are formed independent of each other in the substrate. Drain and source regions of LDMOS and MOS transistors are respectively formed in a self aligned manner in the substrate. Independent claims are also included for the following: (a) an integrated circuit (b) a method of fabrication of a semiconductor device.