ATOMIC LAYERED DEPOSITION APPARATUS AND DEPOSITING METHOD THEREOF FOR REDUCING PROCESS TIME AND INCREASING THROUGH-OUTPUT IN MULTI-LAYER DEPOSITION PROCESS

摘要

PURPOSE: An atomic layered deposition apparatus and a depositing method thereof are provided to lower a deposition temperature, deposit a multi-layer, and improve a processing speed by installing a plasma generation unit at a gas injection part. CONSTITUTION: A wafer(10) is loaded on a disk(20). A shower head(40) is positioned at a predetermined position apart from the disk. A gas injection part is connected to the shower head. A plasma generation unit is installed around the gas injection part. The plasma generation unit includes a coil formed around an outer circumference of a gas injection hole and a magnet plate formed around the coil. A circular plate having fine holes is installed in the gas injection part in order to constrain the plasma within the gas injection part.