发明名称 SEMICONDUCTOR MEMORY DEVICE REDUCING SELF REFRESH CURRENT, ESPECIALLY INCLUDING A PLURALITY OF FUSE OPTION UNITS TO SELECT A PLURALITY OF BANKS
摘要 PURPOSE: A semiconductor memory device reducing a self refresh current is provided to reduce current consumption in a self refresh mode. CONSTITUTION: According to the semiconductor memory device, a fuse enable circuit(30) generates a fuse enable signal. A number of fuse option units(32) determines one of a top block(22) and a bottom block(24) per each bank. A number of uppermost row address selection units(34) output a fuse option uppermost row address being output from the fuse option unit or a normal uppermost row address from the outside of a chip selectively in response to the fuse enable signal.
申请公布号 KR20050010655(A) 申请公布日期 2005.01.28
申请号 KR20030050036 申请日期 2003.07.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JEON, BYUNG DEUK
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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