发明名称 |
SEMICONDUCTOR MEMORY DEVICE REDUCING SELF REFRESH CURRENT, ESPECIALLY INCLUDING A PLURALITY OF FUSE OPTION UNITS TO SELECT A PLURALITY OF BANKS |
摘要 |
PURPOSE: A semiconductor memory device reducing a self refresh current is provided to reduce current consumption in a self refresh mode. CONSTITUTION: According to the semiconductor memory device, a fuse enable circuit(30) generates a fuse enable signal. A number of fuse option units(32) determines one of a top block(22) and a bottom block(24) per each bank. A number of uppermost row address selection units(34) output a fuse option uppermost row address being output from the fuse option unit or a normal uppermost row address from the outside of a chip selectively in response to the fuse enable signal.
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申请公布号 |
KR20050010655(A) |
申请公布日期 |
2005.01.28 |
申请号 |
KR20030050036 |
申请日期 |
2003.07.22 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JEON, BYUNG DEUK |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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