Device and method to read a 2-transistor flash memory cell

摘要

The present invention relates to electronic memories, more particularly to an improved method and apparatus to read the content of compact 2-transistor flash memory cells. A method of reading a 2-transistor flash memory cell 1 is provided. The memory cell 1 comprises a storage transistor 2 with a storage gate 6 and a selecting transistor 3 with a select gate 7. The method comprises leaving the storage gate 6 floating while the select gate 7 is switched from a first voltage to a second voltage, whereby the first voltage is lower than the second voltage. A device according to the present invention comprises a switching circuit for leaving the storage gate 6 floating while the select gate 7 is switched from the first voltage to the second voltage, the first voltage being lower than the second voltage.