| 摘要 |
Methods and apparatus for depositing a layer including providing at least one precursor vapor to a process chamber, providing a gas to the process chamber, separate from the at least one precursor vapor, and forming a compound layer from the at least one precursor vapor and the gas on a wafer in the process chamber. The deposition may be a chemical vapor deposition (CVD) deposition method, a metal organic chemical vapor deposition (MOCVD) deposition method, an atomic layer deposition (ALD) deposition method, or other similar deposition method. The compound layer may be at least one of an oxide, nitride, carbide, or other similar layer.
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