发明名称 Semiconductor device and fabrication method thereof
摘要 The present invention provides a semiconductor device including a first semiconductor element to be bonded to a wiring board in a flip-chip bonding manner, a resin peripheral wall provided on the wiring board in such a manner as to surround the first semiconductor element, a sealing resin poured so as to fill a space surrounded by the resin peripheral wall and then hardened, and a second semiconductor element provided in such a manner that a back surface thereof is fixed on an upper surface of the sealing resin and a electrode provided on a front surface thereof is connected to a segment of wiring on the wiring board by means of a bonding wire, and provides a method of fabricating the semiconductor device. With this configuration, since semiconductor elements of arbitrary outer sizes can be stacked to each other without any limitation by the outer sizes of the semiconductor elements, even in a combination of any outer shapes of semiconductor elements vertically stacked to each other, the semiconductor elements can be mounted at a high density.
申请公布号 US2005017340(A1) 申请公布日期 2005.01.27
申请号 US20040919033 申请日期 2004.08.16
申请人 SHIBUE HITOSHI 发明人 SHIBUE HITOSHI
分类号 H01L23/28;H01L21/52;H01L21/56;H01L21/60;H01L23/31;H01L23/52;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/48;H01L23/495 主分类号 H01L23/28
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