METHOD FOR ANISOTROPICALLY ETCHING A RECESS IN A SILICON SUBSTRATE AND USE OF A PLASMA ETCHING SYSTEM

摘要

The invention relates to a method, wherein plasma is used for energetic excitation of a reactive etching gas. The reactive etching gas is a component of a continuous gas flow. A recess is deepened by at least 50 micrometers without interrupting the gas. A simple method is thus disclosed in order to produce deeper recesses.