МОЩНЫЙ БИПОЛЯРНЫЙ СВЧ ТРАНЗИСТОР

摘要

FIELD: designing and manufacturing high-power microwave transistors. ^ SUBSTANCE: proposed high-power three-contact amplifying microwave transistor has transistor chips carrying transistor structures disposed on metal flange of case that functions as collector contact; input emitter and output base contacts connected by means of conductors to respective electrodes of transistor structures; base electrodes of transistor structures are additionally connected on emitter contact side through strip line section of width W and isolating capacitor to collector contact; maximal distance hmax of emitter conductors from strip line section should meet relationship hmax <= 0.2. Transistor has low internal feedback and dispenses with ceramic heat-conducting chip holder made of high-cost beryllium ceramic. ^ EFFECT: simplified design and reduced cost of transistor. ^ 1 cl, 1 dwg