| 摘要 |
FIELD: semiconductor voltage limiters. ^ SUBSTANCE: voltage limiter has semiconductor silicon crystals. Crystals are placed in insulating case provided with positive and negative outputs. Crystals have at least one p-n junction and are connected in series to each other and to outputs through metal spacers that have to be thermal compensators. Crystals have the same size and show equal values of avalanche breakdown. Total value of avalanche breakdown of crystals connected in series equals to value of avalanche break-down of voltage limiter. Heat capacity and thermal conductivity of each metal gasket is three times or more higher than heat capacity and thermal conductivity of each crystal. Number of crystals that provide reliable operation of limiter is described by formula of invention for over-load capacity. ^ EFFECT: improved power; improved operational reliability. ^ 1 cl, 5 dwg |
