发明名称 COMPOSITION FOR POLISHING
摘要 <p><P>PROBLEM TO BE SOLVED: To obtain a composition for polishing that can furnish a polished surface having improved flatness by reducing minute undulations on the surface. <P>SOLUTION: This composition for polishing comprises a polishing material, a minute undulation reducing agent, an oxidant, a polishing accelerator other than the minute undulation reducing agent and the oxidant, and water. The minute undulation reducing agent reduces minute undulations on the surface to be polished, and accordingly, improves the flatness. Silicon dioxide is a preferable polishing agent. A preferable minute undulation reducing agent is at least one selected from the group consisting of phosphonic acid, phosphinic acid, ammonium hypophosphite, ammonium sulfite, sodium sulfite, hydroquinone, pyrrogallol, erisorbic acid, sodium erisorbate, L-ascorbic acid, formic acid, sodium formate, ammonium formate, oxalic acid, ammonium oxalate, ammonium iodide and gallic acid. The preferable polishing accelerator other than the minute undulation reducing agent and oxidant is at least one selected from the group consisting of organic acids other than formic acid, oxalic acid and gallic acid, as well as phosphoric acid and its salts. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005023228(A) 申请公布日期 2005.01.27
申请号 JP20030191307 申请日期 2003.07.03
申请人 FUJIMI INC 发明人 KAMIYA TOMOHIDE;YOKOMICHI NORITAKA;OWAKI HISAKI
分类号 B24B37/00;C09G1/02;C09K3/14;C09K13/04;C09K13/06;G11B5/84;(IPC1-7):C09K3/14 主分类号 B24B37/00
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