| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element having a element isolation trenched film, which can gradually adjust the top rounding angle and can remove the etching loss layer generated after trench etching. SOLUTION: This manufacturing method comprises a step of forming a pad layer pattern defining an element isolation region on a semiconductor substrate, a step of using the pad layer pattern as a mask for etching the exposed surface of the semiconductor substrate to form a trench, a step of performing light etch treatment to round the upper corner of the trench, a step of oxidizing the sidewall of the trench that was subjected to light etch treatment so as to form a sidewall oxide film, a step of forming a liner nitride film on the sidewall oxide film, a step of forming a gap filling insulation film so that the trench is buried onto the liner nitride film, and a step of planarizing the gap filling insulation film. COPYRIGHT: (C)2005,JPO&NCIPI
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