| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can fully maintain activity of ions implanted in a well region at the formation of this region and minimizes the damages on a semiconductor substrate in the process of the ion implantation and suppresses the TED phenomenon to ions in the well region. SOLUTION: The method for manufacturing a semiconductor device comprises a step of forming a first well region by implanting first ions into a semiconductor substrate and then forming a second well region by implanting second ions in a larger mass than that of the first ions, and a step of annealing the products to form the well region. COPYRIGHT: (C)2005,JPO&NCIPI
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