| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor disposition method including a dry cleaning method that can lower CoO and can effectively eliminate alumina (Al2O3), HfO2, HfSiO4, AlHfO, ZrO2, Ta2O5 thin films and the like which could not be thoroughly eliminated by a conventional cleaning method. SOLUTION: After a thin film is vapor-disposed onto a wafer W on a wafer block 20, the wafer is unloaded from the wafer block 20, and a dry cleaning stage S4 is performed to remove the thin film accumulated inside the chamber 10. At the dry cleaning stage, a dummy wafer is set on the wafer block 20. While an inert gas and a cleaning gas are put into the chamber 10, RF energy is applied to the chamber 10 to remove the thin film accumulated inside the chamber 10. While a gas different from the cleaning gas is put into the chamber 10, RF energy is applied and activated to remove element constituents of the cleaning gas from the inside of the chamber 10, and then, the dummy wafer is unloaded from the wafer block 20. COPYRIGHT: (C)2005,JPO&NCIPI
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