| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which can suppress the interference between adjacent cells to the minimum even when miniaturization proceeds and the distance between cells is shortened, and to provide its manufacturing method. SOLUTION: This semiconductor memory comprises a semiconductor substrate 1, an element isolation insulating film 7 embedded in the semiconductor substrate 1, cell section gate insulating films 2 isolated by the element isolation insulating film 7, and first conductive layers 3. The upper end surface of each first conductive layer 3 is lower than the upper end surface of the element isolation insulating film 7. A conductive interlayer insulating film 8a is formed on the upper surface of each first conductive layer 3 and isolated by the element isolation insulating film 7. A second conductive layer 10 is formed on the conductive interlayer insulating film 8a so that the bottom face of the second conductive layer 10 has contact with the upper end surface of the element isolation insulating film 7. The second conductive layer 10 is wiring common in adjacent memory cell columns. COPYRIGHT: (C)2005,JPO&NCIPI
|
