发明名称 |
Methods for fabricating fin field effect transistors using a protective layer to reduce etching damage |
摘要 |
A method of forming a fin field effect transistor on a semiconductor substrate includes forming a vertical fin protruding from the substrate. A buffer oxide liner is formed on a top surface and on sidewalls of the fin. A trench is then formed on the substrate, where at least a portion of the fin protrudes from a bottom surface of the trench. The trench may be formed by forming a dummy gate on at least a portion of the fin, forming an insulation layer on the fin surrounding the dummy gate, and then removing the dummy gate to expose the at least a portion of the fin, such that the trench is surrounded by the insulation layer. The buffer oxide liner is then removed from the protruding portion of the fin, and a gate is formed in the trench on the protruding portion of the fin.
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申请公布号 |
US2005019993(A1) |
申请公布日期 |
2005.01.27 |
申请号 |
US20040869764 |
申请日期 |
2004.06.16 |
申请人 |
LEE DEOK-HYUNG;CHOI SI-YOUNG;LEE BYEONG-CHAN;SON YONG-HOON;JUNG IN-SOO |
发明人 |
LEE DEOK-HYUNG;CHOI SI-YOUNG;LEE BYEONG-CHAN;SON YONG-HOON;JUNG IN-SOO |
分类号 |
H01L21/336;H01L21/84;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L21/84;H01L21/00;H01L21/44;H01L21/824 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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