Formation of preferably square hole on an alternating phase mask useful in electronics for the lithographic structuring of contact planes in preparation of integrated circuits, and in semiconductor technology

摘要

Formation of preferably square hole (16) on alternating phase mask (1) where hole has two partial regions (12,14) on which light ray impinges with different phase fluctuations involving: preparation of transparent substrate (18) with surface having opaque layer (10), which has two layers (32) in etch process, formation of hole in layer (32), etching so that region (12) is exposed, further etching, widening hole in layer (32), and final layer (32) removal.