METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO CONTROL THERMAL BUDGET PHENOMENON AND LEAKAGE CURRENT OF GATE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to control a thermal budget and a leakage current of a gate by minimizing the heat generated in a source/drain formation process of an LDD(lightly doped drain) type. CONSTITUTION: A semiconductor substrate(10) having a gate electrode is prepared. The first LDD ion implantation process is performed to form the first low density junction region in the semiconductor substrate exposed to both sides of the gate electrode. After a spacer formation process and the second LDD ion implantation process are sequentially performed at least once, a high density ion implantation process is performed to form a spacer on both sidewalls of the gate electrode. The second low density junction region and a high density junction region are formed in the semiconductor substrate to form a source/drain region.