METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO IMPROVE RELIABILITY AND ELECTRICAL CHARACTERISTIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to improve reliability and an electrical characteristic of a semiconductor device by eliminating the necessity of a CMP(chemical mechanical polishing) process and by forming a uniform metal interconnection regardless of the density of a damascene pattern. CONSTITUTION: A semiconductor substrate(201) including various elements for forming a semiconductor device is prepared. A metal seed layer(202) is formed on the semiconductor substrate. A metal interconnection defining pattern(203) in which a metal interconnection region is defined as an opening(204) is formed on the metal seed layer. A conductive material layer(205a) is formed in the opening on the metal seed layer. The metal interconnection defining pattern is eliminated. An exposed region of the metal seed layer is removed.