| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage device which enables easy writing of information by preventing a resistance value of a storage element after writing of information from becoming lower than necessary. <P>SOLUTION: In the storage device, a plurality of storage cells 2 with a storage element 5 and an active element 6 formed of an MOS type transistor for controlling access to the storage element 5 are disposed, and a resistance value of the storage element 5 changes when a voltage is applied to the storage element 5, thus recording information. When recording operation changing from the state of a low resistance value of the storage element 5 to the state of a high value thereof is defined as erasing of information, a voltage applied to the storage cell 2 is Ve, a voltage applied to a gate of the active element 6 is Vg and a minimum voltage required in erasing of information is Vt when information which is subjected to writing is erased. If a drain current flowing in the active element 6 in its ON state is expressed by a function äI(Vg, V)} to a voltage V between a source and a drain of the active element 6, a resistance value R of the storage element 5 after writing of information satisfies the relation: R≥Vt/äI(Vg, Ve-Vt)}. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
