| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high density dynamic random access memory (DRAM) circuit having a storage capacity of 64M. <P>SOLUTION: A semiconductor memory apparatus of DRAM of 64M includes (1) memory cells which function as total number of 64,000,000 pieces to 68,000,000 pieces disposed in a multiple memory array formed on a semiconductor die, and which are capable of addressing; and (2) a circuit formed on the semiconductor die which can write the data in one or more memory cells, and which can read the data from one or more memory cells. A total region in which all regions occupied by the memory cells capable of all functioning in the die and addressing in the operation is not larger than 53 mm<SP>2</SP>. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
