| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with which the number of manufacturing steps is reduced and the contact resistance between plugs is reduced. <P>SOLUTION: An interlayer insulating film 104 having first openings 132 for forming contact plugs is formed. A first electrically conductive film is uniformly formed on the first interlayer insulating film 104 and inside of the first openings 132. A resist film 192 having a wiring pattern is formed in regions other than the first openings 132 by a photolithography process. By carrying out first anisotropic etching, the first electrically conductive film except in the regions covered by the resist film 192 is removed until the upper face of the first interlayer insulating film 104 is exposed to form the wiring and the contact plugs. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
