| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology which can additionally provide a capacitor without changing the size of a high frequency power module for a portable telephone. <P>SOLUTION: A method for manufacturing a semiconductor device includes a step of forming a conductor pattern 7a on a main surface of a multilayer wiring substrate 6, covering the conductor pattern 7a with an insulating thin film 9, and adhering a semiconductor chip 1 oppositely to a rear surface of the conductor pattern 7a via this insulating thin film 9 with a conductive adhesive 10. The method further includes thereafter a step of connecting a wire 11 to a bonding pad 4 formed on a main surface side of the semiconductor chip 1, and forming a parallel flat plate type capacitor C<SB>1</SB>which sandwiches the insulating thin film 9 between the rear surface of the semiconductor chip 1 and the conductor pattern 7a by drawing a conduction from the semiconductor chip 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
