发明名称 Gate driving circuit and semiconductor device
摘要 A gate driving circuit according to the present invention having, an output circuit which is connected to a first power supply terminal and a ground terminal and, upon receiving an ON/OFF signal, changes a level of a gate output terminal between a power supply voltage and a ground voltage, a shunt switching element which is connected between the gate output terminal and the ground terminal and is ON/OFF-controlled upon receiving a shunt control signal, and an output shunt control circuit which monitors the level of the gate output terminal and outputs the shunt control signal, wherein when the level of the gate output terminal decreases to not more than a first threshold value, the output shunt control circuit turns on the shunt switching element, and while the level is not more than a second threshold value larger than the first threshold value, the output shunt control circuit supplies the shunt control signal to said shunt switching element to maintain an ON state of the shunt switching element.
申请公布号 US2005017787(A1) 申请公布日期 2005.01.27
申请号 US20030683046 申请日期 2003.10.14
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOJIMA TSUTOMU
分类号 H01L21/8238;H01L27/092;H02M1/08;H02M1/32;H03K17/04;H03K17/08;H03K17/16;H03K17/56;(IPC1-7):H03B1/00 主分类号 H01L21/8238
代理机构 代理人
主权项
地址