发明名称 Test element group, method of manufacturing a test element group, method of testing a semiconductor device, and semiconductor device
摘要 To provide a TEG capable of early stage feedback of testing contents and a method of testing using the TEG. TFTs for TEG are manufactured on a different substrate than actual panel TFTs by using from among processes for manufacturing actual panel TFTs, processes that may easily lead to dispersion in the TFT characteristics, and the minimum number of processing steps necessary for TFT manufacture. The number of processing steps is fewer than the number for the actual panel, and therefore it is possible to complete the TFTs for TEG quicker than those of the actual panel, and it becomes possible to feed back an evaluation of the TEG TFT characteristics to the actual panel manufacturing process at an early stage. Time and costs associated with manufacture of the actual panel can therefore be suppressed.
申请公布号 US2005017239(A1) 申请公布日期 2005.01.27
申请号 US20040921143 申请日期 2004.08.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD., A JAPAN CORPORATION 发明人 NAKAMURA OSAMU;AKIBA MAI
分类号 G01R31/28;H01L21/66;H01L23/544;H01L29/786;(IPC1-7):H01L31/112;H01L23/58;H01L29/76;H01L31/036 主分类号 G01R31/28
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