发明名称 |
RADIATION EMISSION SEMICONDUCTOR CHIP, MANUFACTURING METHOD THEREFOR, AND METHOD FOR ADJUSTING AND SETTING BRIGHTNESS THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor chip structure which enables radiation emission to be adjusted and set to a target range during the manufacturing period of the semiconductor chip. <P>SOLUTION: The brightness of a radiation emission semiconductor chip is adjusted and set in the manufacturing period of the semiconductor chip after measuring the radiation emission property of a wafer's radiation emission semiconductor layer row (3), by providing to the wafer's radiation outputting bonded surface (10) one or a plurality of absorbing and/or partially insulating brightness adjusting and setting layers (12, 6, and 9). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005026688(A) |
申请公布日期 |
2005.01.27 |
申请号 |
JP20040191785 |
申请日期 |
2004.06.29 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
ZOELFL MICHAEL;STEIN WILHELM;WIRTH RALPH |
分类号 |
H01L31/00;H01L33/14;H01L33/38 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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