发明名称 RADIATION EMISSION SEMICONDUCTOR CHIP, MANUFACTURING METHOD THEREFOR, AND METHOD FOR ADJUSTING AND SETTING BRIGHTNESS THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor chip structure which enables radiation emission to be adjusted and set to a target range during the manufacturing period of the semiconductor chip. <P>SOLUTION: The brightness of a radiation emission semiconductor chip is adjusted and set in the manufacturing period of the semiconductor chip after measuring the radiation emission property of a wafer's radiation emission semiconductor layer row (3), by providing to the wafer's radiation outputting bonded surface (10) one or a plurality of absorbing and/or partially insulating brightness adjusting and setting layers (12, 6, and 9). <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005026688(A) 申请公布日期 2005.01.27
申请号 JP20040191785 申请日期 2004.06.29
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 ZOELFL MICHAEL;STEIN WILHELM;WIRTH RALPH
分类号 H01L31/00;H01L33/14;H01L33/38 主分类号 H01L31/00
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