| 摘要 |
PROBLEM TO BE SOLVED: To provide a self-adjusting bipolar transistor structure having a projecting exogenous base provided with external and internal regions with different dope densities, and to provide its manufacturing method. SOLUTION: The first material of a first dope density is provided so that an exogenous base external region is formed. Then, a first opening is formed in the first material's layer by lithography into which a dummy emitter pedestal is formed, and by which a trench is formed between a side wall of the first opening and the dummy pedestal. Thereafter, the second material of a second dope density is provided within this trench, and another exogenous base internal extension region is formed whose projecting external base marginal part self-adjusts to a dummy pedestal marginal part. Since the emitter is formed where there were the dummy pedestals, this exogenous base also self-adjusts to the emitter. COPYRIGHT: (C)2005,JPO&NCIPI
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