Methods of forming a semiconductor device including a metal silicide layer between a conductive plug and a bottom electrode of a capacitor

摘要

Embodiments of the present invention include methods of forming a contact to a capacitor in a semiconductor device. A metal silicide layer is formed at a top surface of a conductive plug of the semiconductor device that is coupled to a bottom electrode of the capacitor to provide an ohmic contact therebetween. Forming a metal silicide layer may include exposing a surface of the conductive plug, depositing a metal layer of the bottom electrode on the exposed surface of the conductive plug and thermally processing the semiconductor device to react a part of the deposited metal layer and the conductive plug to form the metal silicide layer. Methods of forming a semiconductor device including a capacitor having a metal silicide layer connecting a bottom electrode of the capacitor and a conductive plug are also provided.