| 摘要 |
A nitride-based compound semiconductor light-emitting device comprising a holding electrode partially formed on a first main surface of a semiconductor laminate including nitride-based compound semiconductor layers including at an emission layer. A method of fabricating a nitride-based compound semiconductor light-emitting device, comprising steps of forming a semiconductor laminate by stacking nitride-based compound semiconductor layers at least partially on a substrate to include an emission layer, forming a holding electrode partially on a main surface of the semiconductor laminate located oppositely to the substrate and removing the substrate. Thus, a nitride-based compound semiconductor light-emitting device having high external luminous efficiency with no wafer breakage or cracking and a method of fabricating the same can be proposed.
|
