SEMICONDUCTOR DEVICE AND ITS FABRICATING PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being fabricated through an easy process while exhibiting good high frequency characteristics and high electrostatic breakdown voltage, and to provide its fabricating process. SOLUTION: An npn-type bipolar transistor Bip1 consisting of an epitaxial layer 2, a base diffusion layer 5, a base connection layer 4 and an emitter diffusion layer 6, and a pn-junction diode D1 consisting of the epitaxial layer 2 and an anode layer 3 are formed on a semiconductor substrate 1. The base connection layer 4 and the anode layer 3 are formed by an identical process. COPYRIGHT: (C)2005,JPO&NCIPI