SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To perform good write-in of data for a memory cell, while constituting the memory cell with normal six transistors even if the device has such constitution that the data of a memory cell is outputted from one side of a pair of bit lines through a global bit line for read-out, in a semiconductor memory device. SOLUTION: This device is provided with a plurality of memory cell groups 101 having memory cells 100 of at least two or more. Each memory cell group 101 has a read-out part 103 and a write-in part 102. Data of the memory cell 100 is read out from one side of the bit lines BIT to the global bit line RGBIT through the read-out part 103. The write-in part 102 is shared by memory cells 100 of at least two or more in its own memory cell group 101. COPYRIGHT: (C)2005,JPO&NCIPI