发明名称 SEMICONDUCTOR MEMORY DEVICE AND ITS TESTING METHOD
摘要 PROBLEM TO BE SOLVED: To shorten the time required for a fatigue test in the FeRAM of a shared sense amplifier system. SOLUTION: For example, a cell array selecting signal line STO connected to each gate of cell array selection transistors 12a, 12b, and a cell array selection signal line ST1 connected to each gate of cell array selection transistors 13a, 13b are connected through OR circuits 15a, 15b to a cell array selection circuit 16. The output of the cell array selection circuit 16 is supplied to the input end of one of the OR circuits 15a, 15b. Each test control signal FTG is supplied to the input end of the other. Thus, during the fatigue test, the cell arrays CA, CA of both sides of the sense amplifier 11 are simultaneously operated. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005025878(A) 申请公布日期 2005.01.27
申请号 JP20030191164 申请日期 2003.07.03
申请人 TOSHIBA CORP 发明人 KAMOSHITA MASAHIRO;TAKASHIMA DAIZABURO
分类号 G01R31/28;G11C7/06;G11C7/18;G11C11/22;G11C29/34;(IPC1-7):G11C29/00 主分类号 G01R31/28
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