| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor multilayered film reflection mirror which is made of a material mild to an environment, in which refractive index difference between a high refractive index layer and a low refractive index layer is larger than 0.6, current can also be made to flow, and which can realize a planar optical device operating especially at 1,300nm band or at 1,550nm band being a communication wavelength band, and to provide an optical semiconductor device including the same. SOLUTION: The semiconductor multilayered film reflection mirror is constituted by alternatively laminating a first layer of a fullerene film such as a C<SB>60</SB>fullerene film 6 and a second layer of a group IV semiconductor such as a Si film 4. Moreover the semiconductor multilayered film reflection mirror is constituted by forming the second layer of group II1 to V semiconductor such as a GaP film or of a fullerene film such as a C<SB>90</SB>fullerene film. The optical semiconductor device such as a wavelength variable filter, a face emission type laser, a photodiode or an optical modulator is constituted by using these semiconductor multilayered film reflection mirrors. COPYRIGHT: (C)2005,JPO&NCIPI
|
