发明名称 Active pixel cell using negative to positive voltage swing transfer transistor
摘要 A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor has its gate coupled to the output node.
申请公布号 US2005017155(A1) 申请公布日期 2005.01.27
申请号 US20030625411 申请日期 2003.07.22
申请人 MANABE SOHEI;NOZAKI HIDETOSHI 发明人 MANABE SOHEI;NOZAKI HIDETOSHI
分类号 H01L27/146;(IPC1-7):H01L31/00;H01L27/00 主分类号 H01L27/146
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