发明名称 |
Active pixel cell using negative to positive voltage swing transfer transistor |
摘要 |
A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor has its gate coupled to the output node.
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申请公布号 |
US2005017155(A1) |
申请公布日期 |
2005.01.27 |
申请号 |
US20030625411 |
申请日期 |
2003.07.22 |
申请人 |
MANABE SOHEI;NOZAKI HIDETOSHI |
发明人 |
MANABE SOHEI;NOZAKI HIDETOSHI |
分类号 |
H01L27/146;(IPC1-7):H01L31/00;H01L27/00 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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