| 摘要 |
The invention relates to a micro and nanoelectronic engineering, more precisely to an emitter structural design (including an emissive emitter) for active micro and nanoelectronic components and for diodes and transistors. The aim of said invention is to develop a planar emitter. The inventive structural design makes it possible to develop planar emissive triodes and diodes, i.e. the active components, whose emitters and anodes are arranged on the same plane. The aim is achieved by the fact that the inventive emitter for integrated circuit devices consists of a base which is arranged on a substrate and made of a catalytic material layer provided with carbon nanotubes which are formed thereon in a perpendicular direction with respect to the emitter base, the end of the catalytic material layer arranged between non-catalytic material layers being used as the emitter base. Such a structural design makes it possible to produce a blade-shaped planar emitter whose base thickness is adjustable within a range of 1-50 nm by measuring the catalytic layer thickness and which consists of nanotubes whose diameters are equal to or less than the thickness of the base thereof. In one of embodiments of said invention, the first and foremost, the catalytic layer is provided with a vanadium layer applied thereto, and afterwards with a silicon dioxide layer which makes it possible to form an electron flow control gate. Said structural design of the emitter makes it possible to create nanoelectronic integrated circuits wherein the triode and diode spacing density ranges from 10<9> to 10<13> cm < 2>, that is several orders higher than the performance capabilities of modern microelectronics |
