| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is provided with a block layer containing Al that is formed without using selective growth. SOLUTION: The semiconductor laser device is formed by piling up in order on a compound semiconductor substrate 2 with a crystal surface (100), a first impurity type buffer layer 4, a first impurity type clad layer 6, an active layer 8, a first second impurity type clad layer 10, and an etching stopper layer 12. Furthermore, a waveguide ridge 30 comprised of a second impurity type clad layer and a second impurity type cap layer is formed on the etching stopper layer, first impurity type block layers are embedded on both sides of a ridge for contact, and the crystal surface of a light emission surface for emitting laser light including the active layer is oriented in a direction (110). COPYRIGHT: (C)2005,JPO&NCIPI
|
