| 发明名称 |
PROCESS FOR PREPARING A STABILIZED IDEAL OXYGEN PRECIPITATING SILICON WAFER |
| 摘要 |
<p>The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has a non-uniform distribution of stabilized oxygen precipitate nucleation centers therein. Specifically, the peak concentration is located in the wafer bulk and a precipitate-free zone extends inward from a surface.</p> |
| 申请公布号 |
WO2005007942(A1) |
申请公布日期 |
2005.01.27 |
| 申请号 |
WO2004US20522 |
申请日期 |
2004.06.25 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC.;FALSTER, ROBERT, J.;VORONKOV, VLADIMIR V. |
发明人 |
FALSTER, ROBERT, J.;VORONKOV, VLADIMIR V. |
| 分类号 |
C30B33/00;(IPC1-7):C30B29/06;H01L21/00 |
主分类号 |
C30B33/00 |
| 代理机构 |
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