| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device capable of imparting electrically uniform characteristics to the overall area, by forming an undoped amorphous silicon layer, followed by crystallizing the undoped amorphous silicon thin film through a spike quick heat process to facilitate grain-growth of small-sized grains, thereby deriving a crystal so as to have grains of a circular column configuration having a small-sized grain cross-section grown in a direction perpendicular to grain boundaries while forming the grains to have a small and uniform grain size, thereby causing a surface roughness to be reduced. SOLUTION: The method includes the steps of: forming an amorphous silicon layer on a semiconductor substrate that various elements for forming semiconductor devices are mounted on; and crystallizing first the amorphous silicon layer by means of the spike quick heat process and then forming it into an amorphous polysilicon layer having a small and uniform grain size. COPYRIGHT: (C)2005,JPO&NCIPI
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