发明名称 METHOD OF MANUFACTURING SINGLE-WALL CARBON NANOTUBE
摘要 PROBLEM TO BE SOLVED: To provide a single-wall carbon nanotube in which the individually separated monolayer carbon nanotube and/or the orientated monolayer carbon nanotube is manufactured at a low temperature of≤600°C by using a magnetron plasma CVD method. SOLUTION: A substrate is placed direct below a magnetron type discharge electrode where a high frequency electric field applied from the outside intersects a stationary magnetic field at a right angle, a metallic catalyst supported on a support is fixed on the substrate, magnetron plasma is produced under the coexistence of a hydrocarbon gas while heating the substrate by a heater and the single-wall carbon nanotube is formed on the metallic catalyst under the DC bias control of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005022950(A) 申请公布日期 2005.01.27
申请号 JP20030270933 申请日期 2003.07.04
申请人 HATAKEYAMA RIKIZO;TORAY IND INC 发明人 HATAKEYAMA RIKIZO;KATO TOSHIAKI;TEI KYUKAN;HIRATA TAKAMICHI;OZEKI YUJI
分类号 C01B31/02;C23C16/26;(IPC1-7):C01B31/02 主分类号 C01B31/02
代理机构 代理人
主权项
地址