发明名称 |
METHOD OF MANUFACTURING SINGLE-WALL CARBON NANOTUBE |
摘要 |
PROBLEM TO BE SOLVED: To provide a single-wall carbon nanotube in which the individually separated monolayer carbon nanotube and/or the orientated monolayer carbon nanotube is manufactured at a low temperature of≤600°C by using a magnetron plasma CVD method. SOLUTION: A substrate is placed direct below a magnetron type discharge electrode where a high frequency electric field applied from the outside intersects a stationary magnetic field at a right angle, a metallic catalyst supported on a support is fixed on the substrate, magnetron plasma is produced under the coexistence of a hydrocarbon gas while heating the substrate by a heater and the single-wall carbon nanotube is formed on the metallic catalyst under the DC bias control of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005022950(A) |
申请公布日期 |
2005.01.27 |
申请号 |
JP20030270933 |
申请日期 |
2003.07.04 |
申请人 |
HATAKEYAMA RIKIZO;TORAY IND INC |
发明人 |
HATAKEYAMA RIKIZO;KATO TOSHIAKI;TEI KYUKAN;HIRATA TAKAMICHI;OZEKI YUJI |
分类号 |
C01B31/02;C23C16/26;(IPC1-7):C01B31/02 |
主分类号 |
C01B31/02 |
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